View A2T20H330W24S_9063895.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

A2T20H330W24Sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 58 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 700 ma, v gsb =0.3vdc,p out = 58 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1880 mhz 16.5 50.9 7.9 ?33.1 1960 mhz 16.9 50.5 7.8 ?36.0 2025 mhz 16.3 50.1 7.8 ?36.8 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage range for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? designed for digital predistortion error correction systems document number: A2T20H330W24S rev. 0, 5/2015 freescale semiconductor technical data 1880?2025 mhz, 58 w avg., 28 v airfast rf power ldmos transistor A2T20H330W24Sr6 ni--1230s--4l2l 1. pin connections 4 and 5 are dc coupled and rf independent. 2. device cannot operate with v dd current supplied through pin 3 and pin 6. figure 1. pin connections (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (2) vbw b (2) 6 3 15 24 carrier peaking (1) ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 268 1.2 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 58 w w--cdma, 28 vdc, i dqa = 700 ma, v gsb = 0.3 vdc, f = 1960 mhz r ? jc 0.25 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier (4) gate threshold voltage (v ds =10vdc,i d = 140 ? adc) v gs(th) 1.4 1.3 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 700 madc, measured in functional test) v gsa(q) 2.2 2.6 3.0 vdc drain--source on--voltage (v gs =10vdc,i d =1.4adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b, peaking (4) gate threshold voltage (v ds =10vdc,i d = 180 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.8adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. v dda and v ddb must be tied together and powered by a single dc power supply. (continued)
A2T20H330W24Sr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.3vdc, p out = 58 w avg., f = 1880 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 15.5 16.5 18.5 db drain efficiency ? d 48.5 50.9 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.2 7.9 ? db adjacent channel power ratio acpr ? ?33.1 ?29.0 dbc load mismatch (3) (in freescale doherty test fixture, 50 ohm system) i dqa = 700 ma, v gsb = 0.3 vdc, f = 1960 mhz vswr 10:1 at 32 vdc, 354 w pulse output power (3 db input overdrive from 240 w pulse rated power) no device degradation typical performance (3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.3vdc, 1880?2025 mhz bandwidth p out @ 1 db compression point, cw p1db ? 240 ? w p out @ 3 db compression point (4) p3db ? 380 ? w am/pm (maximum value measured at the p3db compression point across the 1880?2025 mhz bandwidth) ? ? ?19 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 145 mhz bandwidth @ p out =58wavg. g f ? 0.6 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.005 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) (5) ? p1db ? 0.006 ? db/ ? c table 5. ordering information device tape and reel information package A2T20H330W24Sr6 r6 suffix = 150 units, 56 mm tape width, 13--reel ni--1230s--4l2l 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurement made with device in an a symmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 5. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 v gga v dda v ggb v ddb A2T20H330W24S rev. 0 d64762 cut out area r4 c p c13 c1 r1 r2 z1 r3 c14 r5 c2 c12 c4 c11 c3 c15 c18 c7 c6 c9 c8 c10 c17 c5 c16 -- -- c19 c20 figure 2. A2T20H330W24Sr6 test circuit component layout note: v dda and v ddb must be tied together and powered by a single dc power supply. table 6. A2T20H330W24Sr6 test circui t component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6, c7 8.2 pf chip capacitors atc600f8r2bt250xt atc c8 5.6 pf chip capacitor atc600f5r6bt250xt atc c9, c10 0.8 pf chip capacitors atc600f0r8bt250xt atc c11, c12 0.6 pf chip capacitors atc600f0r6at250xt atc c13, c14, c15, c16, c17, c18 10 ? f chip capacitors c5750x7s2a106k230kb tdk c19, c20 220 ? f, 63 v electrolytic capacitors sk063m0220b5s-1012 yageo r1, r2 2.2 ? , 1/4 w chip resistor crcw12062r20jnea vishay r3 50 ? , 10 w chip resistor cw12010t0050gbk atc r4, r5 1k ? , 1/4 w chip resistors crcw12061k00fkea vishay z1 1700?2000 mhz band, 90 ? , 5 db directional coupler x3c19p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d64762 mtl
A2T20H330W24Sr6 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) ?2.2 ?1.8 ?1.9 ?2 ?2.1 ?2.3 1850 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 58 watts avg. 15.6 17.6 17.4 17.2 ?37 54 53 52 51 ?32 ?33 ?34 ?35 ? d , drain efficiency (%) g ps , power gain (db) 17 16.8 16.6 16.4 16.2 16 15.8 1875 1900 1925 1950 1975 2000 2025 2050 50 ?36 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ? 70 ? 20 ? 30 ? 40 ? 60 1 300 imd, intermodulatio n distortion (dbc) ? 50 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 30 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 5 55 80 130 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 105 acpr parc acpr (dbc) ?50 ?20 ?25 ?30 ?40 ?35 ?45 18 g ps , power gain (db) 17.5 17 16.5 16 15.5 15 g ps ?5 1 acpr ? d parc g ps v dd =28vdc,p out = 30 w (pep), i dqa = 700 ma v gsb = 0.3 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz im3--u im5--l im7--l im7--u im3--l 100 ?1 db = 34.7 w 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf ?2 db = 53.5 w ?3 db = 73.5 w v dd =28vdc,p out =58w(avg.),i dqa = 700 ma v gsb = 0.3 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf im5--u v dd =28vdc,i dqa = 700 ma, v gsb = 0.3 vdc, f = 1960 mhz single--carrier w--cdma ? d
6 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 8 20 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 18 16 10 100 500 10 ?60 acpr (dbc) 14 12 10 0 ?30 ?40 ?50 figure 7. broadband frequency response 3 21 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 700 ma v gsb =0.3vdc 15 12 9 gain (db) 18 6 1600 1700 1800 1900 2000 2100 2200 2300 2400 gain acpr ? d 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1880 mhz v dd =28vdc,i dqa = 700 ma, v gsb =0.3vdc single--carrier w--cdma g ps 1960 mhz 2025 mhz 1880 mhz 1960 mhz 2025 mhz 1880 mhz 2025 mhz 1960 mhz
A2T20H330W24Sr6 7 rf device data freescale semiconductor, inc. table 7. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 774 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.73 ? j3.99 1.65 + j4.16 1.09 ? j3.27 19.2 52.2 167 59.4 ?12 1960 3.43 ? j5.25 3.31 + j5.46 1.18 ? j3.50 19.3 52.2 165 59.6 ?13 2025 6.42 ? j5.02 6.81 + j5.80 1.20 ? j3.67 19.5 52.1 163 58.7 ?13 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.73 ? j3.99 1.54 + j4.30 1.07 ? j3.44 17.0 53.0 199 61.1 ?16 1960 3.43 ? j5.25 3.22 + j5.82 1.15 ? j3.65 17.0 52.9 196 60.6 ?17 2025 6.42 ? j5.02 7.20 + j6.40 1.22 ? j3.82 17.3 52.9 194 60.2 ?17 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 774 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.73 ? j3.99 1.80 + j4.54 2.56 ? j2.40 22.3 50.1 103 72.8 ?18 1960 3.43 ? j5.25 3.81 + j5.93 2.29 ? j2.45 22.2 50.2 104 71.5 ?19 2025 6.42 ? j5.02 8.06 + j5.78 2.00 ? j2.60 22.2 50.4 110 69.8 ?18 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.73 ? j3.99 1.73 + j4.63 2.72 ? j2.37 20.4 50.6 114 74.9 ?25 1960 3.43 ? j5.25 3.70 + j6.23 2.29 ? j2.41 20.3 50.8 120 73.0 ?26 2025 6.42 ? j5.02 8.59 + j6.16 2.06 ? j2.48 20.4 50.9 123 72.0 ?25 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 table 9. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.6ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.21 ? j4.59 1.07 + j4.59 1.71 ? j3.44 14.6 53.5 222 57.0 ?33 1960 1.99 ? j5.85 1.82 + j6.09 1.77 ? j3.38 15.0 53.5 226 57.7 ?33 2025 3.66 ? j7.62 3.48 + j7.91 1.67 ? j3.37 15.2 53.7 235 59.4 ?35 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.21 ? j4.59 1.07 + j4.78 1.63 ? j3.56 12.4 54.3 268 58.0 ?39 1960 1.99 ? j5.85 1.92 + j6.43 1.77 ? j3.58 12.8 54.3 270 58.5 ?40 2025 3.66 ? j7.62 3.91 + j8.48 1.82 ? j3.65 13.0 54.4 276 60.0 ?42 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =0.6ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.21 ? j4.59 0.93 + j4.56 3.89 ? j2.29 15.8 51.9 156 67.3 ?37 1960 1.99 ? j5.85 1.61 + j6.06 3.07 ? j2.05 16.2 52.3 170 67.7 ?37 2025 3.66 ? j7.62 3.07 + j7.90 2.72 ? j1.91 16.3 52.3 170 69.5 ?39 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.21 ? j4.59 0.99 + j4.78 3.44 ? j3.07 13.6 53.1 204 66.8 ?44 1960 1.99 ? j5.85 1.75 + j6.42 3.25 ? j2.35 14.1 53.0 200 67.7 ?46 2025 3.66 ? j7.62 3.60 + j8.50 2.92 ? j2.29 14.2 53.2 207 68.8 ?47 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
A2T20H330W24Sr6 9 rf device data freescale semiconductor, inc. p1db ? typical carrier load pull contours ? 1960 mhz p e p e p e p e ?4.5 ?1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 ?4.5 ?1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 ?4.5 ? 1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) ?4.5 ? 1.5 ?2.5 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 1 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 3 50.5 48.5 51.5 51 52 49 49.5 50 62 66 64 56 60 70 68 20.5 20 21.5 23 21 22 22.5 19.5 19 ?22 ?20 ?18 ?16 ?12 ?14 ?28 ?3 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) p e 48.5 p e 58 p e p e ?26 ?24 48 50.5
10 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 p3db ? typical carrier load pull contours ? 1960 mhz p e p e p e p e ?4.5 ?1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 ?4.5 ?1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 ?4.5 ? 1.5 ?2.5 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 13 ?3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) ?4.5 ? 1.5 ?2.5 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 ?2 ?3.5 ?4 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) 3 51.5 49.5 50.5 51 52 49 52.5 50 70 72 18.5 19 20.5 18 21 17 17.5 19.5 20 ?28 ?26 ?24 ?20 ?14 ?16 ?18 ?22 ?30 ?3 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) p e 49 p e 58 68 66 64 62 60 p e p e
A2T20H330W24Sr6 11 rf device data freescale semiconductor, inc. p1db ? typical peaking load pull contours ? 1960 mhz p e p e p e p e 34 5 1 7 26 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 2 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 6 51.5 51 52 53 50 60 58 54 62 56 64 66 14.5 16 52 ?3 0 ?2 imaginary ( ? ) ?1 ?4 ?5 ?3 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 26 ?3 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 26 ?3 p e 50 49.5 52.5 50.5 53.5 52.5 52 p e 56 54 52 p e 15 13 14 15.5 13.5 p e ?36 ?34 ?32 ?40 ?46 ?44 ?42 ?38
12 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 p3db ? typical peaking load pull contours ? 1960 mhz p e p e p e p e 34 5 1 7 26 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 2 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 6 51.5 53.5 50.5 51 52 53 52.5 54 60 58 54 62 56 64 66 13.5 14 12.5 12 13 ?48 ?46 ?44 ?40 ?52 ?38 ?38 ?42 ?50 52 ?3 0 ?2 imaginary ( ? ) ?1 ?4 ?5 ?3 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 26 ?3 0 ?2 imaginary ( ? ) 34 5 1 7 ?1 ?4 ?5 26 ?3 p e 50.5 p e 52 54 p e 11 11.5 p e 53
A2T20H330W24Sr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. A2T20H330W24Sr6
A2T20H330W24Sr6 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 may 2015 ? initial release of data sheet
16 rf device data freescale semiconductor, inc. A2T20H330W24Sr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: A2T20H330W24S rev. 0, 5/2015

▲Up To Search▲

Price & Availability of A2T20H330W24S

	To Download A2T20H330W24S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .